| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a (co)polymer for resist capable of obtaining high sensitivity and/or resolution, when being used for DUV excimer laser lithography, electron beam lithography or the like. <P>SOLUTION: The (co)polymer for resist includes at least one kind of monomeric unit selected from among monomeric units having an alicyclic skeleton and monomeric units having a lactone skeleton, wherein a molecular end group represented by formula (1): R<SP>1</SP>-(R<SP>2</SP>-)(R<SP>3</SP>-)C- is not included in the ends of each molecule, where R<SP>1</SP>and R<SP>2</SP>are each H, a 1-10C alkyl group, -COOR<SP>A</SP>, -X-COO-R<SP>A</SP>, -CONR<SP>B</SP>-R<SP>A</SP>, -X-CONR<SP>B</SP>-R<SP>A</SP>, -NR<SP>B</SP>-R<SP>A</SP>or -X-NR<SP>B</SP>-R<SP>A</SP>, and R<SP>3</SP>is cyano group or a 2-10C cyano alkyl group. <P>COPYRIGHT: (C)2010,JPO&INPIT |
