| 摘要 |
PROBLEM TO BE SOLVED: To microfabricate, without deteriorating an element, a semiconductor which is constructed with a work-function control metal conductor deposited on a high dielectric insulating film. SOLUTION: The semiconductor has an insulating film 102 containing Hf or Zr, formed on a semiconductor substrate 101 and a conductive film 103 containing Ti, Ta, or Ru, formed on the insulating film. The semiconductor processing method is to process the conductive film in a plasma atmosphere using a resist 107 formed on the conductive film, and the resist 107 is removed in the plasma atmosphere containing hydrogen but no oxygen. COPYRIGHT: (C)2010,JPO&INPIT |
