| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which achieves a reduction in the parasitic resistance of transistors by adopting a silicide layer in active regions of the transistors, when the transistors are formed by using a substrate of which the semiconductor layer is thin as in an FD-SOI, while avoiding an increase in a leakage current by a relatively simple process. SOLUTION: A gate oxide film and a gate electrode material are sequentially formed over a semiconductor layer of an SOI substrate and gate electrodes are patterned. Sidewalls consisting of insulators to cover sidewalls of the gate electrode are formed. Ions are implanted into the semiconductor layer on both sides of the gate electrode to form drain/source regions. The sidewalls are partially etched to expose upper parts of the sidewalls of the gate electrode. A metal film is deposited to cover the tops of the drain/source regions and the gate electrode and the exposed sidewalls. Heat treatment is executed on the SOI substrate to form silicide layers in the surfaces of the gate electrode and the drain/source regions. COPYRIGHT: (C)2010,JPO&INPIT |
