CURRENT REDUCTION ELEMENT, MEMORY ELEMENT, AND METHODS FOR MANUFACTURE OF THE ELEMENTS

摘要

Disclosed is a memory element (3) comprising: resistance change elements (1) which are arranged in matrix in a memory device, can change in the electric resistance value when an electric pulse having a positive or negative polarity is applied to the resistance change elements (1), and can maintain the changed electric resistance value; and current reduction elements (2) which can reduce a current that flows upon the application of an electric pulse to the resistance change elements (1).  Each of the current reduction elements (2) comprises a first electrode, a second electrode, and a current reduction layer arranged between the first electrode and the second electrode.  The current reduction layer is composed of SiNx, and at least one of the first electrode and the second electrode is composed of a-tungsten.