| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate processing method and substrate processing apparatus, which can prevent unevenness of a thickness while securing a film forming speed. <P>SOLUTION: The substrate processing method includes a first process for conveying, stacking, and housing a plurality of Si wafers in a processing chamber 201, a second process for heating the Si wafers, supplying first gas to the processing chamber 201, and forming a first amorphous silicon film of a desired thickness, a third process for heating a substrate, supplying second gas different from the first gas in the processing chamber 201, and forming a second amorphous silicon film of a desired thickness. The Si wafers are treated, wherein the first gas is higher-order gas than the second gas. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
