| 摘要 |
PROBLEM TO BE SOLVED: To provide a scalable quantum well device and a method of manufacturing the same. SOLUTION: A quantum well QW device includes a quantum well region QW, which covers a substrate 1, a gate region G which covers a part of the quantum well region, and a source region S and a drain region D which adjoins the gate region. The quantum well region includes a buffer structure 2, which contains semiconductor material having a first band gap, a channel structure 3, which covers the buffer structure 2 and contains semiconductor material having a second band gap, and a barrier structure 4, which contains undoped semiconductor material having a third band gap in contact with the channel structure 3. The first band gap and the third band gap are wider than the second band gap. The source region S and the drain region D are self-aligned, with respect to the gate region G and contain semiconductor material having a fourth band gap, and the fourth band gap is wider than the second band gap. COPYRIGHT: (C)2010,JPO&INPIT |
