发明名称 |
MULTILAYER LOW REFLECTIVITY HARD MASK AND PROCESS THEREFOR |
摘要 |
A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).
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申请公布号 |
US2010009536(A1) |
申请公布日期 |
2010.01.14 |
申请号 |
US20090468715 |
申请日期 |
2009.05.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GHANDEHARI KOUROS;MINVIELLE ANNA M.;PLAT MARINA V.;TOKUNO HIROKAZU |
分类号 |
H01L21/306;G03F7/20 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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