| 摘要 |
Provided is a semiconductor temperature sensor capable of enhancing accuracy of temperature detection. A constant current circuit (13) of a current supply circuit (10a) causes a constant current to flow. A current mirror circuit of the current supply circuit (10a) supplies a temperature detection current from an output terminal thereof according to the constant current of the constant current circuit (13). A temperature detecting circuit (10b) outputs an output voltage according to the temperature detection current and a temperature. A PMOS transistor (19) of a leak current absorbing circuit (10c) has the same size and conductivity type as those of a PMOS transistor (15), and absorbs a leak current included in the temperature detection current (drain current of the PMOS transistor (15)).
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