NONVOLATILE MEMORY ELEMENT, METHOD FOR MANUFACTURING THE NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT

摘要

Disclosed is a nonvolatile memory element comprising a first electrode (103), a second electrode (108), and a resistance change layer (107) that is interposed between the first electrode (103) and the second electrode (108) and undergoes a reversible change in a resistance value in response to an electric signal applied across both the electrodes (103, 108).  The resistance change layer (107) has at least a laminate structure comprising a first hafnium-containing layer having a composition represented by HfOx, wherein 0.9 = x = 1.6, and a second hafnium-containing layer having a composition represented by HfOy, wherein 1.8 < y < 2.0, stacked on top of each other.