| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical device improving laser characteristics by reducing a leakage current flowing along both sides of an active layer. SOLUTION: The semiconductor optical device 51 includes a mesa stripe part 20A including a first cladding layer 3n, the active layer 5, and a second cladding layer 7p provided on a semiconductor substrate 2n, the current block layer 9 formed to bury a side surface of the mesa stripe part 20A and in which impurities having action for capturing at least one of an electron and hole is doped, an n-type semiconductor intermediate layer 11A and a p-type semiconductor intermediate layer 10A formed between the mesa stripe part 20A and the current block layer 9. The p-type semiconductor intermediate layer 10A is in contact with the side surface of the mesa stripe part 20A, and the n-type semiconductor intermediate layer 11A is formed between the p-type semiconductor intermediate layer 10A and the current block layer 9. COPYRIGHT: (C)2010,JPO&INPIT
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