| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride-based light emitting device with a roughened surface. <P>SOLUTION: The light emitting device comprises a substrate, a buffer layer, an n-type III-nitride semiconductor layer, a III-nitride semiconductor light emitting layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor light emitting layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor layer, and a second roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
