| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that while a transition layer whose composition is not sharply changed appears in the neighborhood of the interface of a film in the case of forming a hetero-epitaxial film by forming a thin film formed of materials whose lattice constants are different from those of materials configuring the main surface of a substrate on the main surface of a substrate, this transition layer results in the deterioration of characteristics of crystal in the neighborhood of the interface of the hetero-epitaxial film. SOLUTION: A substrate is bent to a direction following one main surface of the substrate according to lattice constants of materials configuring a thin film to be formed and lattice constants of materials configuring one main surface of the substrate on which the thin film is formed. Then, the thin film is formed on one main surface of the substrate in such a state that the substrate is bent. COPYRIGHT: (C)2010,JPO&INPIT |
