SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing wiring that suppresses an increase in resistance of a Cu wiring pattern due to diffusion of Mn when a Cu-Mn alloy is combined with a bimetal film to make a self-repair of a defect and improve adhesiveness during formation of a Cu wiring structure by a damascene method. SOLUTION: A semiconductor device has a structure including an insulating film 21 which is formed over a semiconductor substrate and contains oxygen, a recessed portion 21T formed in the insulating film, a high-fusion-point metal film 22 formed on an internal wall of the recessed portion, a metal film 23 which is formed on the high-fusion-point metal film and contains copper and manganese, and a copper film 24A which is formed on the metal film and fills the recessed portion. COPYRIGHT: (C)2010,JPO&INPIT