| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-quality single crystal wafer of SiC. SOLUTION: The wafer is an SiC wafer having a diameter of at least about 3 inches (75 mm) and at least one square inch (6.25 cm<SP>2</SP>) of continuous surface area that has a basal plane dislocation volume density of less than about 500 cm<SP>-2</SP>for a 4° off-axis wafer. The production method of the wafer includes a step of forming an SiC boule having a diameter of a little larger than 3 inches, a step of slicing the boule at an angle between about 2° and 12° to 0001 plane into a wafer, wherein the wafer has a surface area including at least one square inch of continuous surface area that has a basal plane dislocation volume density of less than about 500 cm<SP>-2</SP>. The high quality SiC semiconductor precursor wafer 4 produced by the above method additionally has at least one layer of at least one group III nitride layer 6. COPYRIGHT: (C)2010,JPO&INPIT
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