| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of efficiently depositing a thin film of a fluoride material having sufficient characteristics on a substrate. Ž<P>SOLUTION: The film deposition apparatus 1 has in a vacuum chamber 2 at least a rotary drum 4 for repeatedly moving a substrate S between a vapor deposition processing area 30A and a plasma processing area 60A and a substrate holding plate 4a, a vapor deposition means 30 for depositing the evaporant of a raw material for vapor deposition containing a fluoride material on the substrate S introduced in the vapor deposition processing area 30A, and a plasma processing means 60 for processing the evaporant of the raw material for vapor deposition deposited on the substrate S by bringing plasma of reactive gas into contact with the substrate S introduced in the plasma processing area 60A. A thin film of the fluoride material is deposited on the substrate S by using the film deposition apparatus 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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