发明名称 INTERCONNECTING BIT LINES IN MEMORY DEVICES FOR MULTIPLEXING
摘要 An embodiment of a memory device has a plurality of conductive plugs formed on a semiconductor substrate and a pair of successively adjacent first and second bit lines overlying and in contact with each of the conductive plugs.
申请公布号 US2010008154(A1) 申请公布日期 2010.01.14
申请号 US20090560103 申请日期 2009.09.15
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C7/10;G11C16/04;H01L27/088 主分类号 G11C7/10
代理机构 代理人
主权项
地址