发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To solve the disadvantages of existing semiconductor devices wherein bonding resins peel at interfaces with an insulating layer, and cracks resulting from the peeling form appearance defects. SOLUTION: In a semiconductor device, a fourth insulating layer 33 forms a protrusion 34 to reduce a level difference t1 on the formation area of a photodiode 7. The level difference of a passivation film 36 is thus reduced over the surface of a substrate 1 to reduce variations in film thickness of a silicone resin 38. The structure relaxes local concentration of thermal stress on the silicone resin 38 to prevent peeling-based cracks in the silicone resin 38 and whereby crack-based appearance defects. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010010232(A) |
申请公布日期 |
2010.01.14 |
申请号 |
JP20080165188 |
申请日期 |
2008.06.25 |
申请人 |
SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD;SANYO HANDOTAI SEIZO KK |
发明人 |
ONE NAOKI;NASU KAZUO;SHINPO MASAHIRO |
分类号 |
H01L27/14;H01L21/768;H01L21/8234;H01L23/522;H01L27/06 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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