| 发明名称 |
Silicon wafer and production method thereof |
| 摘要 |
In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 µm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5x10 7 precipitates/cm 3 . |
| 申请公布号 |
EP2117038(A3) |
申请公布日期 |
2010.01.13 |
| 申请号 |
EP20090159574 |
申请日期 |
2009.05.06 |
| 申请人 |
SUMCO CORPORATION |
发明人 |
SHIOTA, TAKAAKI;NAKAYAMA, TAKASHI;KABASAWA, TOMOYUKI |
| 分类号 |
H01L21/322;H01L21/306 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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