COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass% and 5.0 mass%; silicon (Si) between 0.4 mass% and 1.5 mass%; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 µm and not larger than 20 µm, and a standard deviation of the crystalline grain diameter is not larger than 10 µm.