发明名称 |
COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM |
摘要 |
<p>An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.</p> |
申请公布号 |
EP2142682(A2) |
申请公布日期 |
2010.01.13 |
申请号 |
EP20080870410 |
申请日期 |
2008.04.09 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE |
发明人 |
GORDON, ROY GERALD;BHANDARI, HARISH;KIM, HOON |
分类号 |
C23C16/18;C07C211/65;C23C16/04;C23C16/34;C23C16/455;H01L21/285;H01L21/768;H01L23/532 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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