SURFACE-HYDROPHOBICIZED FILM, MATERIAL FOR FORMATION OF SURFACE-HYDROPHOBICIZED FILM, WIRING LAYER, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

A technology that realizes formation of a wiring layer being less in rate of electric current leakage and being high in EM (electromigration) resistance and TDDB (time-dependent dielectric breakdown) resistance, thereby realizing production of a semiconductor device ensuring less power consumption and high reliability. There is provided a surface-hydrophobicized film in contact with an insulating film, having a hydrophobicity higher than that of the insulating film at the contact, which surface-hydrophobicized film on the opposite side is also in contact with a wiring and contains at least one atom selected from the group consisting of a sulfur atom, a phosphorus atom and a nitrogen atom.