摘要 |
<p>Luminescent diode comprising a n-type IIII-V substrate (pref. GaAs) with a doped p-zone is improved in that the different lattice constants of the III-V substrate and the p-zone are equalised by introduction of other elements of gps. III and/or V into the substrate and/or the recrystallised zone, whereby the efficiency of the diode is increased.</p> |