发明名称 Luminescent diodes - with compensated lattice constants for increased emission
摘要 <p>Luminescent diode comprising a n-type IIII-V substrate (pref. GaAs) with a doped p-zone is improved in that the different lattice constants of the III-V substrate and the p-zone are equalised by introduction of other elements of gps. III and/or V into the substrate and/or the recrystallised zone, whereby the efficiency of the diode is increased.</p>
申请公布号 DE2044676(A1) 申请公布日期 1972.03.16
申请号 DE19702044676 申请日期 1970.09.09
申请人 SIEMENS AG 发明人
分类号 H01L33/00;(IPC1-7):05B33/16 主分类号 H01L33/00
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