发明名称 |
Diode with stress reducing means |
摘要 |
The component has lead-free high-temperature resistant extensive connections (4, 5) that are formed between a semiconductor chip (3) and parts (1, 6) of the component. The semiconductor chip is a silicon semiconductor chip and parts are copper parts. The connections are formed as low-temperature connection layers that are formed using low-temperature connection technique. Silicon carbide and gallium nitrides are utilizable as semiconductor chip. The layers are formed within silicon surfaces of the chip. |
申请公布号 |
EP2075835(A3) |
申请公布日期 |
2010.01.13 |
申请号 |
EP20080105698 |
申请日期 |
2008.10.30 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
SPITZ, RICHARD;GOERLACH, ALFRED;DIETRICH, JOCHEN |
分类号 |
H01L23/492;H01L21/60;H01L23/00;H01L29/06 |
主分类号 |
H01L23/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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