发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce resistance by increasing the volume of a conductive film by including a protrusion higher than a planar region of a conductive film. CONSTITUTION: In a semiconductor device and a method for manufacturing the same, a conductive film comprises a planar region(17A) and a protrusion region. The protrusion region(17B) has the surface higher than the planar region. The pattern(14) comprises a conductive film. The protrusion region is selected from one a hemisphere, a cylinder, a tetrahedron, and a polyhedron, or combination of them. The pattern includes at least one protrusion region. The conductive film(15) is a single layer consisting of a silicon film or a metal material film.
申请公布号 KR20100004768(A) 申请公布日期 2010.01.13
申请号 KR20080065116 申请日期 2008.07.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, TAE KYUN;JI, YUN HYUCK;LEE, SEUNG MI
分类号 H01L21/336 主分类号 H01L21/336
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