发明名称 |
METHOD FOR PURIFYING A SUBSTRATE IN CRYSTALLINE SILICON AND METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL |
摘要 |
Process of purifying a crystalline silicon substrate comprises extracting impurities by external gettering effect and heating the substrate at a temperature of 750-1000[deg] C, for 1 second to 10 minutes, followed by cooling the substrate at room temperature, before the extraction step. An independent claim is included for a process for elaboration of photovoltaic cell type comprising texturation of the surface of the crystalline silicon substrate obtained by the process. |
申请公布号 |
EP2143687(A2) |
申请公布日期 |
2010.01.13 |
申请号 |
EP20090290535 |
申请日期 |
2009.07.03 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DUBOIS, SEBASTIEN;ENJALBERT, NICHOLAS;MONNA, REMI |
分类号 |
C01B33/037;H01L21/322;H01L31/0236;H01L31/028;H01L31/18 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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