| 摘要 |
A semiconductor device having a substrate and, superimposed thereon, a ferroelectric capacitor. The ferroelectric capacitor is composed of an inferior electrode and, sequentially superimposed thereon, a ferroelectric film and a superior electrode. The superior electrode is composed of a first layer of oxide whose stoichiometric composition is represented by the chemical formula AOxin which xis a composition parameter and whose actual composition is represented by the chemical formula AOxin which xis a composition parameter and, sequentially superimposed on the first layer, a second layer of oxidewhose stoichiometric composition is represented by the chemical formula BOyin which yis a composition parameter and whose actual composition is represented by the chemical formula BOyin which yis a composition parameter and a metal layer. The second layer has a proportion of oxidation higher than that of the first layer. The composition parameters x, x, yand ysatisfy the relationship y/y> x/x. The second layer at its interface with the metal layer is provided with an interfacial layer of stoichiometric compositionwith an increased oxidation proportion.
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