Method for manufacturing a connecting contact on a semiconductor device for power electronics and electronic component with a connecting contact on a semiconductor device manufactured in this way

摘要

The method involves welding a semiconductor component (1) with a contact element (2) by laser beam welding. The semiconductor component is soldered and sintered to a substrate at a lower side by a connecting layer (3). The semiconductor component is contacted with the contact element at an upper side by a laser welding connection (6) via a weldable metallic layer (5). The substrate is used as a direct copper bonded (DCB)-carrier substrate (4). The metallic layer is arranged at the upper side on the semiconductor component.