| 摘要 |
<p>PURPOSE: A magnetic tunnel junction device having, a memory cell having the same and a method for manufacturing the same are provided to prevent the interference between magnetic tunnel junction layers by implementing the magnetic tunnel junction layer of a concave type structure. CONSTITUTION: A magnetic tunnel junction layer(116) protects the side and a lower surface of a second electrode. A first electrode(111) surrounds the side and the lower surface of the magnetic tunnel junction layer. The first electrode and magnetic tunnel junction layer is a cylinder shape. The magnetic tunnel junction layer comprises a free layer, a tunnel insulating layer, a pinned film, and a pinning layer. The free layer surrounds the side and lower surface of the second electrode(117). The tunnel insulating layer protects the side and lower surface of the free layer. The pinned film surrounds the side and lower surface of the tunnel insulating layer. The pinning layer surrounds the side and lower surface of the pinned film.</p> |
