| 摘要 |
<p>The method involves filling a cavity by an electrically insulating material (7) till a free face of a protection layer (2) to obtain an insulating anchoring portion. Epitaxy process of a semiconductor material i.e. silicon, is carried out from the protection layer and the insulating material to obtain an epitaxied layer for production of a flexible mechanical element. The flexible mechanical element is released by dry etching of the protection layer through a mask, where the etching allows a portion of an overhang of the protection layer to remain on edges of the cavity. An independent claim is also included for a micro-electro-mechanical-system or nano-electro-mechanical-system structure comprising a flexible mechanical element.</p> |
