| 摘要 |
In a fabrication method of a semiconductor device a manufacturing method of a mask and an optimization method of a mask bias incorporating an optical proximity correction are provided. The manufacturing method of the mask incorporating an optical proximity correction can form a pattern in an excellent quality in a dense area where a micro design pattern in an irregular array state is formed. Also, a desired design pattern can be formed using a mask according to embodiments of the present invention regardless of an array state.
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