发明名称 Method for fabricating pixel structure
摘要 A pixel structure fabricating method is provided. A gate and a gate insulation layer covering the gate are formed on a substrate. A channel layer is formed on the gate insulation layer. A conductive layer is formed on the channel layer and gate insulation layer. A black matrix having a color filer layer accommodating opening is formed on the conductive layer. The black matrix includes a first block and a second block which is thicker than the first block. The conductive layer is patterned with the black matrix as a mask to form a source and a drain on the channel layer. A color filter layer is formed within the color filter layer accommodating opening through inkjet printing. A dielectric layer is formed on the black matrix and color filter layer. The dielectric layer is patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.
申请公布号 US7645649(B1) 申请公布日期 2010.01.12
申请号 US20080242938 申请日期 2008.10.01
申请人 AU OPTRONICS CORPORATION 发明人 LAI CHE-YUNG;JHANG ZONG-LONG;TSAI CHIA-CHI;TUNG CHEN-PANG;CHANG CHIA-MING;CHIANG CHUN-YI;YU CHOU-HUAN;HSIAO HSIANG-CHIH;CHOU HAN-TANG;CHANG JUN-KAI;LIAO TA-WEN
分类号 H01L21/00 主分类号 H01L21/00
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