发明名称 |
Method for fabricating pixel structure |
摘要 |
A pixel structure fabricating method is provided. A gate and a gate insulation layer covering the gate are formed on a substrate. A channel layer is formed on the gate insulation layer. A conductive layer is formed on the channel layer and gate insulation layer. A black matrix having a color filer layer accommodating opening is formed on the conductive layer. The black matrix includes a first block and a second block which is thicker than the first block. The conductive layer is patterned with the black matrix as a mask to form a source and a drain on the channel layer. A color filter layer is formed within the color filter layer accommodating opening through inkjet printing. A dielectric layer is formed on the black matrix and color filter layer. The dielectric layer is patterned to expose the drain. A pixel electrode electrically connected to the drain is formed. |
申请公布号 |
US7645649(B1) |
申请公布日期 |
2010.01.12 |
申请号 |
US20080242938 |
申请日期 |
2008.10.01 |
申请人 |
AU OPTRONICS CORPORATION |
发明人 |
LAI CHE-YUNG;JHANG ZONG-LONG;TSAI CHIA-CHI;TUNG CHEN-PANG;CHANG CHIA-MING;CHIANG CHUN-YI;YU CHOU-HUAN;HSIAO HSIANG-CHIH;CHOU HAN-TANG;CHANG JUN-KAI;LIAO TA-WEN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|