发明名称 |
THIN FILM TRANSISTOR, THE METHOD FOR USING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICE COMPRISING THE TFT |
摘要 |
<p>PURPOSE: A thin film transistor, a method for manufacturing the same, and an organic electroluminescent display device are provided to reduce a defect due to arc by crystallizing an amorphous silicon layer by applying an electric field for a source/drain electrode. CONSTITUTION: A buffer layer(110) is positioned on a substrate(100). A semiconductor layer(120) is positioned on the buffer layer. A gate insulation layer(130) is positioned on the semiconductor layer. A gate electrode(140) is positioned on the gate insulation layer. An interlayer insulation layer(150) is positioned on the substrate including the gate electrode and includes a first contact hole and a second contact hole. A source/drain electrode is positioned on the interlayer insulation layer, is insulated from the gate electrode, and is partially connected to the semiconductor layer through a first contact hole.</p> |
申请公布号 |
KR20100003936(A) |
申请公布日期 |
2010.01.12 |
申请号 |
KR20080064001 |
申请日期 |
2008.07.02 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
AHN, JI SU;KIM, SUNG CHUL |
分类号 |
H01L29/786;H01L51/50;H05B33/26 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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