发明名称 |
Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same |
摘要 |
Provided are a power semiconductor device using a silicon substrate as a FS layer and a method of manufacturing the same. A semiconductor substrate of a first conductivity type is prepared. An epitaxial layer is grown on one surface of the semiconductor substrate. Here, the epitaxial layer is doped at a concentration lower than that of the semiconductor substrate and is intended to be used as a drift region. A base region of a second conductivity type is formed in a predetermined region of the epitaxial layer. An emitter region of the first conductivity type is formed in a predetermined region of the base region. A gate electrode with a gate insulating layer is formed on the base region between the emitter region and the drift region of the epitaxial layer. A rear surface of the semiconductor substrate is ground to reduce the thickness of the semiconductor substrate, thereby setting an FS region of the first conductivity type. A collector region of the second conductivity type is formed on the ground surface of the semiconductor substrate of the FS region, thereby forming an FS-IGBT.
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申请公布号 |
US7645659(B2) |
申请公布日期 |
2010.01.12 |
申请号 |
US20050289823 |
申请日期 |
2005.11.30 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR, LTD. |
发明人 |
YUN CHONG-MAN;OH KWANG-HOON;LEE KYU-HYUN;KIM YOUNG-CHULL |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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