发明名称 Data line layout in semiconductor memory device and method of forming the same
摘要 In one aspect, a semiconductor device is provided which includes a data block including M parallel and sequentially arranged data lines numbered {0, 1, 2, . . . n, n+1, . . . , m-1, m}, where M, n and m are positive integers, and where n<m, and M=m+1, and a first decoder region and a second decoder region respectively located on opposite sides of the data block. A first data line group among the M data lines extend to the first decoder region from the data block, and a second data line group among the M data lines extend to the second decoder region from the data block. The first data line group includes even numbered data lines among the data lines {0, 1, 2, . . . n}, and odd numbered data lines among the data lines {n+1, . . . m-1, m}, and the second data line group includes odd numbered data lines among the data lines {0, 1, 2, . . . n}, and even numbered data lines among the data lines {n+1, . . . m-1, m}.
申请公布号 US7645644(B2) 申请公布日期 2010.01.12
申请号 US20080113994 申请日期 2008.05.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEL JONG-SUN;CHOI JUNG-DAL
分类号 H01L21/82 主分类号 H01L21/82
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