METHOD OF LIGHT INDUCED PLATING ON SEMICONDUCTORS

摘要

PURPOSE: A method for light induction plating on a semiconductor is provided to reduce intensity of light for the remaining period of a plating period after giving the light with high intensity for a limited time. CONSTITUTION: A front side of a semiconductor is n-doped and includes an anti-reflection layer including patterned openings. A part of the n-doped front side of the semiconductor is exposed under the anti-reflection layer. A rear side of the semiconductor includes a metal coating. The doped semiconductor is contacted with the nickel plating. The light with initial intensity is applied to the doped semiconductor for a preset time. The initial intensity is reduced to the preset quantity for the remaining time of the plating period. A nickel layer is deposited on the exposed part of the n-doped front side of the semiconductor.