发明名称 |
Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent |
摘要 |
Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
|
申请公布号 |
US7645694(B2) |
申请公布日期 |
2010.01.12 |
申请号 |
US20080143445 |
申请日期 |
2008.06.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLBURN MATTHEW E.;SHNEYDER DMITRIY;SIDDIQUI SHAHAB |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|