发明名称 |
MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation |
摘要 |
A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiH4 at a first flow rate, and the second SiON layer is formed with SiH4 at a second higher flow rate.
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申请公布号 |
US7645657(B2) |
申请公布日期 |
2010.01.12 |
申请号 |
US20070001370 |
申请日期 |
2007.12.10 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BRISBIN DOUGLAS;CHAPARALA PRASAD;O'CONNELL DENIS FINBARR;MCCULLOH HEATHER;DRIZLIKH SERGEI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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