发明名称 APPARATUS OF TREATING A SUBSTRATE IN A SINGLE WAFER TYPE AND METHOD OF THE SAME
摘要 PURPOSE: An apparatus and a method for processing a single wafer type substrate are provided to improve dry efficiency by airtightly comprising a dry chamber. CONSTITUTION: A single wafer type substrate device(100) includes a cleaning chamber(130), a dry chamber(150), a spin chuck(121), and a door(135,151). The cleaning chamber cleans a substrate. The dry chamber is positioned around the cleaning chamber and dries the cleaned substrate. The substrate is loaded on the spin chuck which rotates and linearly moves in the cleaning chamber and the dry chamber. The door is positioned between the cleaning chamber and the dry chamber, covers the dry chamber tightly for drying the substrate and is opened for the linear movement of the spin chuck.
申请公布号 KR20100003942(A) 申请公布日期 2010.01.12
申请号 KR20080064008 申请日期 2008.07.02
申请人 K.C.TECH CO., LTD.;MTK CO., LTD. 发明人 LEE, BYEONG CHANG
分类号 H01L21/304 主分类号 H01L21/304
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