| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to uniformly maintain the thickness of a metal gate layer by reducing a grain size on an upper side of a conductive layer for a floating gate using a laser thermal process. CONSTITUTION: A tunnel insulation layer(101), a first conductive layer(102), a dielectric layer(103), a second conductive layer(104) are successively stacked on a semiconductor substrate(100). The second conductive layer, the dielectric layer, and the first conductive layer are patterned. An insulation layer(106) is formed on the overall structure including the second conductive layer. The planarization process is performed to expose the upper side of the second conductive layer. A sacrificial layer for a metal gate is formed on the second conductive layer by performing a thermal process. The metal layer is formed on the sacrificial layer for the metal gate. A metal gate layer(108) is formed by reacting the sacrificial layer for the metal gate with the metal layer.
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