发明名称 MICROWAVE SILICON CARBIDE P-I-N-DIODE
摘要 A SHF silicon carbide - p-i-n diode relates to semiconductor SHF electronics, in particular to p-i-n diodes and may by used effectively in developing semiconductor control SHF–devices, specifically devices for control phase and amplitude of signal, switches, channel switches, attenuators, modulators, suppressors and stabilizer of SHF- power, as well as it may be used as high-temperature commutating elements in pulse and continuous modes.
申请公布号 UA46834(U) 申请公布日期 2010.01.11
申请号 UA20090006713U 申请日期 2009.06.26
申请人 "ORION" SCIENTIFIC AND RESEARCH INSTITUTE" STATE COMPANY 发明人 BASANETS VOLODYMYR VASYLIOVYCH;BOLTOVETS MYKOLA SYLOVYCH;VEREMIICHENKO HEORHII MYKYTOVYCH;HOLINNAIA TETIANA IVANIVNA;KRIVUTSA VALENTYN ANTONOVYCH;LYCHMAN KYRYLO OLEKSIIOVYCH;URITSKAIA NADIIA YAROSLAVIVNA
分类号 H01L21/02;H01L21/04;H01L29/86;H01L29/868 主分类号 H01L21/02
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