发明名称 METHOD FOR FABRICATING TRANSPARENT CONDUCTING OXIDE ELECTRODE WITH HIGH TRANSMITTANCE
摘要 <p>PURPOSE: A method for manufacturing a transparent conductive oxide electrode with high transmittance is provided to improve light transmittance of a transparent electrode by regularly and uniformly forming a pattern of a nano scale on a surface of the transparent conductive oxide electrode. CONSTITUTION: A sol layer(20) is prepared by forming the mixture of a sol state including a transparent conductive oxide material on a substrate(10). A polymer mold(30) made of the material absorbing the solvent of the mixture is arranged on the sol layer. A pressure chamber(40) is divided into the pressure part and the vacuum part by a flexible layer(410). The substrate with the polymer mold is mounted on the vacuum unit of the pressure chamber. A transparent conductive oxide gel pattern is formed on the substrate by imprinting the sol layer at a temperature of 100 to 200 degrees centigrade with 1 to 10 atm pressure. The transparent conductive oxide gel pattern is annealed. The mixture of the sol state with the transparent conductive oxide includes ITO(Indium Tin Oxide), AZO(Al doped ZnO), GZO(Gallium doped ZnO) or SnO2.</p>
申请公布号 KR20100003690(A) 申请公布日期 2010.01.11
申请号 KR20090026173 申请日期 2009.03.27
申请人 LEE, HEON 发明人 LEE, HEON
分类号 H01L21/027;H01L21/28 主分类号 H01L21/027
代理机构 代理人
主权项
地址