NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to reduce lateral leakage of a charge stored at a first floating gate electrode by including a second floating gate electrode with a different conductive type from the first floating gate electrode. CONSTITUTION: A tunnel oxide film pattern(102a) is formed on a substrate(100). A first floating gate electrode(104b) is equipped on the tunnel oxide film pattern and is made of the polysilicon doped with the first conductive impurity. A spacer shaped second floating gate electrode(114b) is equipped on the first and second side walls facing each other on the first floating gate electrode. The second floating gate electrode is made of the polysilicon doped with the second conductive impurity different from the first conductive type. A blocking dielectric film pattern(118a) is deposited along the surface of the first and second floating gate electrodes. A control gate electrode(120a) is equipped on the blocking dielectric layer pattern.