A PASSIVE MATRIX-ADDRESSABLE MEMORY APPARATUS

摘要

PURPOSE: A passive matrix-addressable memory device is provided to maintain data state stored at a memory cell by reducing a size of an interference voltage applied to a memory unit. CONSTITUTION: One parallel second electrode line(220) or more are formed to a cross direction with a first electrode line(210). A memory unit(100) is formed between the first and second electrode lines and includes electrically polarizable material showing hysteresis. A switch is formed between the memory unit and the first electrode line. The switch unit has increased current conductivity when the applied voltage is above a threshold voltage. A depolarization preventing unit is formed between the switch unit and the memory unit and prevents the depolarization on the interface between the switch unit and the memory. The depolarization preventing unit includes a metal material or electrical conductive polymer material.