| 摘要 |
PURPOSE: An apparatus for annealing a semiconductor substrate and a method for forming a device isolation layer are provided to prevent a pore inside a polysilazane film by sufficiently oxidizing the polysilazane layer buried in a trench. CONSTITUTION: A plate(210) is arranged on a lower side of a reactive chamber, and mounts and heats a semiconductor substrate(200). A nozzle head(220) is arranged on an upper side of a reactive chamber to face the semiconductor substrate and supplies a reactive source. A reactive source supply nozzle(230) is arranged in the nozzle head. An oxidation prevention gas inlet(231) is arranged in an inner side of the nozzle head not to supply the reactive source to the central unit of the semiconductor substrate. An injector injects the reactive source to the semiconductor substrate from the outside of the semiconductor substrate. A pump exhausts solvent to the upper side of the reactive chamber with the plate.
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