| 摘要 |
PURPOSE: A method for forming silicide of a semiconductor device is provided to prevent defect and failure of the silicide due to a delay time by performing a silicide forming process again after removing a natural oxidation layer on a semiconductor substrate. CONSTITUTION: A cleaning process for a semiconductor substrate with a gate electrode is performed. A metal material layer for silicide is formed on an upper side of a semiconductor substrate(S201). If the preset time elapses after forming the metal material layer for the silicide(S203), the metal material layer for the silicide is removed using chemical with cleaning and etching characteristics(S205). A natural oxidation layer formed on the upper side of the gate electrode is removed performing a prior cleaning process for the semiconductor substrate without the metal material layer for the silicide(S207). The metal material layer is formed on the upper side of the semiconductor substrate removing the natural oxidation layer and the metal material layer for the silicide again(S209). The thermal process for the semiconductor substrate forming the metal material layer for the silicide again is performed(S211).
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