| 摘要 |
<p>The present invention aims to prevent an electrode from being separated from a substrate or a silicon layer. After surface-treating a first copper thin film (13) mainly containing copper by exposing the film (13) to an ammonia gas, a silicon nitride film is formed on the first copper thin film (13) by generating a plasma of a raw material gas containing a silane gas and an ammonia gas in the atmosphere in which an object (10) to be processed is placed. By surface-treating the film (13) in advance with an ammonia gas, diffusion of a silane gas into the first copper thin film (13) can be prevented, and an electrode composed of the surface-treated first copper thin film (13) is not separated from a glass substrate (11) or a silicon layer. In addition, such an electrode is not increased in electrical resistance.</p> |
