| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an image sensor in which a charge increasing electrode is made higher in breakdown voltage. <P>SOLUTION: A CMOS image sensor includes an electron multiplication unit 3a which increases electrons by collision ionization, a multiplication gate electrode 8 (charge increasing electrode) for applying a voltage for multiplying electrons to the electron multiplication unit 3a, and an insulating film provided between the multiplication gate electrode 8 and electron multiplication unit 3a, the insulating film including a first insulating film 6a made of a thermally-oxidized film and a second insulating film 6b formed on the first insulating film 6a and made of an oxide film. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
