| 摘要 |
A solid-state imaging device includes: an effective pixel region where photoelectric converting portions for obtaining an imaging signal corresponding to light from an object are disposed; an OB pixel region having an element region for obtaining a reference signal of an optical black level; a first light blocking layer which is disposed on the effective pixel region, and in which openings are provided above the photoelectric converting portions; and a second light blocking layer which is disposed on the OB pixel region, the first light blocking layer and the second light blocking layer are electrically isolated from each other by an isolating region, and the imaging device further includes a light blocking section for blocking light from entering the isolating region is provided.
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