发明名称 SEMICONDUCTOR DEVICE
摘要 A sense amplifier section comprises two stages of latch-type sense amplifier circuits, i.e., a primary-stage latch-type sense amplifier and a secondary-stage latch-type sense amplifier, wherein stress exerted on the primary-stage latch-type sense amplifier is reduced significantly to ensure high accuracy in amplification. In the above configuration including the secondary-stage latch-type sense amplifier, when an amplified output from the primary-stage latch-type sense amplifier reaches a predetermined voltage level (e.g., 50 mV), a transition to amplifying operation of the secondary-stage latch-type sense amplifier is enabled so that a time duration of operation of the primary-stage latch-type sense amplifier (corresponding to a time duration of stress exertion on the primary-stage latch-type sense amplifier) can be shortened significantly. Further, by providing a clamp circuit in the primary-stage latch-type sense amplifier, it is possible to decrease a stress voltage itself to be applied to the primary-stage latch-type sense amplifier.
申请公布号 US2010002528(A1) 申请公布日期 2010.01.07
申请号 US20090433934 申请日期 2009.05.01
申请人 RENESAS TECHNOLOGY CORP. 发明人 OKAWA SHINICHI
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址