SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME

摘要

A seed crystal for the growth of a silicon carbide single crystal is provided which inhibits crystal defects from generating at the interface between the seed crystal and graphite and with which a high-quality silicon carbide single crystal having a low crystal defect density can be produced with satisfactory reproducibility.  The seed crystal for the growth of a silicon carbide single crystal is a seed crystal (13) for silicon carbide single-crystal growth which is to be attached to the lid of a graphite crucible filled with a raw silicon carbide powder.  The seed crystal (13) comprises: a seed crystal (4) which is constituted of silicon carbide and one side of which is a growth surface (4a) where a silicon carbide single crystal is to be grown by the sublimation method; and a carbon film (12) formed on the side (4b) opposite to the growth surface of the seed crystal (4), the carbon film (12)  having a density of 1.2-3.3 g/cm3.